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| Transistors with built-in Resistor UNR2225 (UN2225), UNR2226 (UN2226), UNR2227 (UN2227) Silicon NPN epitaxial planar type For muting Features * Costs can be reduced through downsizing of the equipment and reduction of the number of parts * Mini type package allowing easy automatic insertion through tape packing and magazine packing 10 1.1+0.2 -0.1 1.1+0.3 -0.1 Unit: mm 0.40+0.10 -0.05 3 1.50+0.25 -0.05 2.8+0.2 -0.3 0.16+0.10 -0.06 1 2 (0.65) (0.95) (0.95) 1.90.1 2.90+0.20 -0.05 Resistance by Part Number Marking Symbol (R1) * UNR2225 (UN2225) FZ 10 k * UNR2226 (UN2226) FY 4.7 k * UNR2227 (UN2227) FW 6.8 k (R2) 6.8 k 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package Absolute Maximum Ratings Ta = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 30 20 5 600 200 150 -55 to +150 Unit V V V mA mW C C Internal Connection R1 B R2 E C Electrical Characteristics Ta = 25C 3C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio UNR2227 UNR2225/2226 VCE(sat) R1 IC = 50 mA, IB = 2.5 mA -30% 4.7 6.8 10 R1/R2 0.8 1.0 1.2 Symbol VCBO VCEO VEBO ICBO IEBO hFE Conditions IC = 1 A, IE = 0 IC = 2 mA, IB = 0 IE = 1 A, IC = 0 VCB = 30 V, IE = 0 VEB = 5 V, IC = 0 VCE = 10 V, IC = 100 mA 70 100 600 80 +30% mV k Min 30 20 5 1 1 Typ Max Unit V V V A A Collector-emitter saturation voltage Input resistance UNR2226 UNR2227 UNR2225 Resistance ratio UNR2227 Note) The part numbers in the parenthesis show conventional part number. Publication date: December 2003 SJH00040CED 0 to 0.1 0.40.2 5 1 UNR2225/2226/2227 Electrical Characteristics (continued) Ta = 25C 3C Parameter Resistance ratio UNR2226 UNR2227 UNR2225 Transition frequency fT VCB = 10 V, IE = -50 mA, f = 200 MHz Symbol Ron Conditions VI = 7 V, RL = 1 k, f = 1 kHz Min Typ 0.95 1.1 1.5 200 MHz Max Unit Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Refer to Ron measurment circuit RL R1 VI R2 VB VV VA f = 1 kHz V = 0.3 V Ron = VB x RL () VA-VB Common characteristics chart PT Ta 250 Total power dissipation PT (mW) 200 150 100 50 0 0 40 80 120 160 Ambient temperature Ta (C) Characteristics charts of UNR2225 IC VCE Collector-emitter saturation voltage VCE(sat) (mV) 400 Ta = 25C VCE(sat) IC 1 000 IC / IB = 10 hFE IC 250 VCE = 10 V Forward current transfer ratio hFE Collector current IC (mA) 300 IB = 1.0 mA 0.9 mA 0.8 mA 200 Ta = 75C 150 100 25C -25C 200 0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA 0.2 mA 0.1 mA Ta = 75C -25C 10 25C 100 100 50 0 0 2.5 5.0 7.5 10.0 1 0 1 10 100 1 10 102 103 104 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 2 SJH00040CED UNR2225/2226/2227 Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 14 IO VIN 105 VO = 5 V Ta = 25C VIN IO 100 VO = 0.2 V Ta = 25C 104 Output current IO (A) 10 Input voltage VIN (V) 10 103 102 5 1 10 1 1 10 100 1 0.25 0.50 0.75 1.00 1.25 1.50 0.1 10-3 10-2 10-1 1 10 102 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR2226 IC VCE 400 Ta = 25C IB = 1.0 mA 0.9 mA VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (mV) 1 000 IC / IB = 10 hFE IC 500 VCE = 10 V Forward current transfer ratio hFE 400 Ta = 75C 300 25C -25C 200 Collector current IC (mA) 300 0.8 mA 0.7 mA 0.6 mA 200 0.5 mA 0.4 mA 100 0.3 mA 0.2 mA 0.1 mA 0 0 2.5 5.0 7.5 10.0 100 Ta = 75C 25C 10 -25C 100 1 1 10 100 1 000 0 1 10 102 103 104 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 14 f = 1 MHz 105 VO = 5 V Ta = 25C IO VIN 100 VIN IO VO = 0.2 V Ta = 25C 104 Output current IO (A) 10 Input voltage VIN (V) 10 103 102 5 1 10 1 1 10 100 1 0.25 0.50 0.75 1.00 1.25 1.50 0.1 10-3 10-2 10-1 1 10 102 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) SJH00040CED 3 UNR2225/2226/2227 Characteristics charts of UNR2227 IC VCE 400 VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (mV) Ta = 25C 1 000 IC / IB = 10 300 hFE IC VCE = 10 V Forward current transfer ratio hFE 250 Collector current IC (mA) 300 IB = 1.0 mA 0.9 mA 0.8 mA Ta = 75C 200 25C 150 -25C 100 200 0.7 mA 0.6 mA 0.5 mA 100 Ta = 75C 100 0.4 mA 0.3 mA 0.2 mA 0.1 mA 0 2 4 6 10 25C -25C 10 1 10 100 1 000 50 0 0 1 10 102 103 104 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 20 IO VIN 100 f = 1 MHz VIN IO VO = 5 V Ta = 25C 100 VO = 0.2 V Ta = 25C 16 10 Output current IO (mA) Input voltage VIN (V) 10 12 1 8 0.1 1 4 0.01 0 1 10 100 0.001 0.25 0.50 0.75 1.00 1.25 1.50 0.1 10-3 10-2 10-1 1 10 102 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 4 SJH00040CED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2003 SEP |
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